Copper-Indium-Gallium-diSelenide (CIGS) Nanocrystalline Bulk Semiconductor as the Absorber Layer and Its Current Technological Trend and Optimization
نویسندگان
چکیده
The Copper Indium Gallium diSelenide (CIGS) thin film solar cells are considered in this chapter. The interest in Cu(In1-x, Gax)Se2 thin film solar cells has increased significantly due to its promising characteristics for high performance and low cost. It is aimed to present an extensive evaluation on CIGS nanocrystalline bulk semiconductor and its application as an absorber layer for thin film solar cells. It is also aimed to improve the CIGS thin film solar cell efficiency through finding optimum ranges of material properties. The first section of this chapter gives an extensive overview on CIGS nanocrystalline bulk semiconductor background and technological trend. In the middle section, a brief review on CIGS Solar Cell processing and challenges are highlighted and the last section a numerical simulation results on the effects of each of constructive nano layer properties on cell performance are shown and compared with valid experimental results.
منابع مشابه
PACS numbers: 78.20.Bh, 73.40.Lq, 84.60.Jt SIMULATION OF CIGS THIN FILM SOLAR CELLS USING AMPS-1D
The solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of CIGS layer was varied ...
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